2SB867 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB867 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= -0.

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Datasheet Specifications

Part number: 2SB867
Manufacturer: INCHANGE
File Size: 213.65 KB
Datasheet: 2SB867-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak

2SB867 Distributors

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2SB867 PNP Transistor INCHANGE

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