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2SB861 PNP Transistor

2SB861 Description

isc Silicon PNP Power Transistor 2SB861 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Wide Area of Safe Operation. Complement to Type 2SD1138. Minimum Lo.

2SB861 Applications

* Developed for low frequency power amplifier color TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Curre

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Datasheet Details

Part number
2SB861
Manufacturer
INCHANGE
File Size
212.61 KB
Datasheet
2SB861-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB861-like datasheet