2SB861 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB861 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Wide Area of Safe Operation. Complement to Type 2SD1138. Minimum Lo.

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Datasheet Specifications

Part number: 2SB861
Manufacturer: INCHANGE
File Size: 212.61 KB
Datasheet: 2SB861-INCHANGE.pdf
Description: PNP Transistor

Applications

* Developed for low frequency power amplifier color TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Curre

2SB861 Distributors

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2SB861 PNP Transistor INCHANGE

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