2SC2525 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2525 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). Good Linearity of hFE. 100% avalanche tested. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: 2SC2525
Manufacturer: INCHANGE
File Size: 185.84 KB
Datasheet: 2SC2525-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IE Emitter Current-C

2SC2525 Distributors

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2SC2525 NPN Transistor INCHANGE

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