2SC2522 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). Fast Switching Speed. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SC2522
Manufacturer: Inchange Semiconductor
File Size: 207.97 KB
Datasheet: 2SC2522-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* High frequency power amplifier
* Audio power amplifiers
* Switching regulators
* DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Coll

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2SC2522 Silicon NPN Power Transistor Inchange Semiconductor

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