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2SC2660 NPN Transistor

2SC2660 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V (Min). Large Collector Power Dissipation. Complement to Type 2SA1133. Minimum Lot.

2SC2660 Applications

* Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A

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Datasheet Details

Part number
2SC2660
Manufacturer
INCHANGE
File Size
193.73 KB
Datasheet
2SC2660-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC2660-like datasheet