Datasheet4U Logo Datasheet4U.com

2SC3047 NPN Transistor

2SC3047 Description

isc Silicon NPN Power Transistor 2SC3047 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC3047 Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 10 V

📥 Download Datasheet

Preview of 2SC3047 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3047
Manufacturer
INCHANGE
File Size
191.47 KB
Datasheet
2SC3047-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3040 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3042 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3043 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3046 - Silicon NPN Transistor (Fujitsu)
  • 2SC3000 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3001 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3006 - Silicon NPN epitaxial planer type Transistor (Toshiba Semiconductor)
  • 2SC3007 - Silicon NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3047-like datasheet