2SC5130 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5130 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC5130
Manufacturer: INCHANGE
File Size: 169.07 KB
Datasheet: 2SC5130-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Co

2SC5130 Distributors

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2SC5130 NPN Transistor INCHANGE

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