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2SC5130 NPN Transistor

2SC5130 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5130 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

2SC5130 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Co

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Datasheet Details

Part number
2SC5130
Manufacturer
INCHANGE
File Size
169.07 KB
Datasheet
2SC5130-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC5130-like datasheet