2SC5132A Datasheet - Hitachi Semiconductor

2SC5132A Silicon NPN Triple Diffused Planar Transistor

2SC5132A Features

* High breakdown voltage VCES = 1500 V, IC = 8 A

* Built

* in damper diode type

* Isolated package TO-3P

* FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item

Datasheet Details

2SC5132A

Hitachi Semiconductor

66.45 KB

Silicon npn triple diffused planar transistor.

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