Datasheet4U Logo Datasheet4U.com

2SD1060 NPN Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0. Com.

📥 Download Datasheet

Preview of 2SD1060 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD1060
Manufacturer
INCHANGE
File Size
210.41 KB
Datasheet
2SD1060-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V

2SD1060 Distributors

📁 Related Datasheet

📌 All Tags

INCHANGE 2SD1060-like datasheet