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2SD1060 NPN Transistor

2SD1060 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0. Com.

2SD1060 Applications

* Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V

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Datasheet Details

Part number
2SD1060
Manufacturer
INCHANGE
File Size
210.41 KB
Datasheet
2SD1060-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1060-like datasheet