* Low collector-to-emitter saturation voltage : VCE(sat)=(
* )0.4V max.
* Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base
2SD1063
Sanyo Semicon Device
100.34 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:688H
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB827/2SD1063
50V/7A Switching Applicationsa
Applications
* Universal high c.
📁 Related Datasheet
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2SD1060 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR
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UTC 2SD1060
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FEATURE
*Low collector-to-emitter saturation voltage: VCE(sat)=0.
2SD1060 - SILICON POWER TRANSISTOR
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Ordering number : EN686K
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http://onsemi.
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: V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage-
: .
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(Sanyo Semicon Device)
Ordering number:687G
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