2SD1061 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0. Com.

📥 Download Datasheet

2SD1061 Datasheet Preview — Preview of 2SD1061 PDF

Datasheet Specifications

Part number: 2SD1061
Manufacturer: INCHANGE
File Size: 210.26 KB
Datasheet: 2SD1061-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general high current switching as solenoid driving, high speed inverter and converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC

2SD1061 Distributors

📁 Related Datasheet

2SD1062 2SD1063 2SD1064 2SD1065 2SD1069 2SD1000

📌 All Tags

2SD1061 NPN Transistor INCHANGE

INCHANGE 2SD1061-like datasheet