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2SD1136 NPN Transistor

2SD1136 Description

isc Silicon NPN Power Transistor 2SD1136 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device.

2SD1136 Applications

* Designed for power switching and TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4

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Datasheet Details

Part number
2SD1136
Manufacturer
INCHANGE
File Size
203.06 KB
Datasheet
2SD1136-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1136-like datasheet