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2SD1137 - NPN Transistor

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Datasheet Details

Part number 2SD1137
Manufacturer INCHANGE
File Size 203.51 KB
Description NPN Transistor
Datasheet download datasheet 2SD1137-INCHANGE.pdf

2SD1137 Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Wide Area of Safe Operation Complement to Type 2SB860 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage

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