2SD1137 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Wide Area of Safe Operation. Complement to Type 2SB860. Minimum Lot.

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Datasheet Specifications

Part number: 2SD1137
Manufacturer: INCHANGE
File Size: 203.51 KB
Datasheet: 2SD1137-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continu

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2SD1137 NPN Transistor INCHANGE

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