2SD1138 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min). Wide Area of Safe Operation. Complement to Type 2SB861. Minimum Lot.

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Datasheet Specifications

Part number: 2SD1138
Manufacturer: INCHANGE
File Size: 208.50 KB
Datasheet: 2SD1138-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continu

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2SD1138 NPN Transistor INCHANGE

INCHANGE 2SD1138-like datasheet