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2SD1193 NPN Transistor

2SD1193 Description

isc Silicon NPN Darlington Power Transistor 2SD1193 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 7. Low Saturation Voltage. C.

2SD1193 Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collect

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Datasheet Details

Part number
2SD1193
Manufacturer
INCHANGE
File Size
212.20 KB
Datasheet
2SD1193-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1193-like datasheet