2SD1194 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1194 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 1. Low Saturation Voltage.

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Datasheet Specifications

Part number: 2SD1194
Manufacturer: INCHANGE
File Size: 182.19 KB
Datasheet: 2SD1194-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Cur

2SD1194 Distributors

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2SD1194 NPN Transistor INCHANGE

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