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2SD1196 Datasheet - INCHANGE

2SD1196 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 1500(Min) @IC= 4A *Low Saturation Voltage *Complement to Type 2SB886 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor d.

2SD1196-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1196

Manufacturer:

INCHANGE

File Size:

206.93 KB

Description:

Npn transistor.

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2SD1196 2SD1196 NPN Transistor INCHANGE

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