2SD1196 Datasheet - INCHANGE

2SD1196, NPN Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 4A. Low Saturation Voltage. Co.

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2SD1196-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1196

Manufacturer:

INCHANGE

File Size:

206.93 KB

Description:

NPN Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Cu

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2SD1196 NPN Transistor INCHANGE

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