2SD1255 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

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Datasheet Specifications

Part number: 2SD1255
Manufacturer: INCHANGE
File Size: 218.20 KB
Datasheet: 2SD1255-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation

2SD1255 Distributors

📁 Related Datasheet

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2SD1255 NPN Transistor INCHANGE

INCHANGE 2SD1255-like datasheet