Datasheet4U Logo Datasheet4U.com

2SD1370 - NPN Transistor

2SD1370 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1370 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC.

2SD1370 Applications

* High power switching applications
* Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuo

📥 Download Datasheet

Preview of 2SD1370 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1370
Manufacturer
INCHANGE
File Size
184.27 KB
Datasheet
2SD1370-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1371 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SD1375 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1376K - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1377 - Silicon NPN Transistor (Hitachi)
  • 2SD1377K - Silicon NPN Transistor (Hitachi)
  • 2SD1378 - Power Transistor (Inchange Semiconductor)
  • 2SD1379 - NPN Transistor (Rohm)
  • 2SD1302 - Silicon NPN Transistor (Panasonic Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1370-like datasheet