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2SD1378 - Power Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 0.5A Complement to Type 2SB1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power ampl

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Datasheet Details

Part number 2SD1378
Manufacturer Inchange Semiconductor
File Size 212.47 KB
Description Power Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.7 A 1.2 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1378 isc website：www.iscsemi.
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