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2SD1371 - Silicon NPN Transistor

Datasheet Summary

Description

High Voltage High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

ballast applications.

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Datasheet Details

Part number 2SD1371
Manufacturer Inchange Semiconductor
File Size 208.13 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1371 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W 2SD1371 isc website：www.iscsemi.
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