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2SD1376 Datasheet - INCHANGE

2SD1376 NPN Transistor

*High DC Current Gain- : hFE = 2000(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) *Low Collector-Emitter Saturation Voltage *Complement to Type 2SB1012 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SD1376-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1376

Manufacturer:

INCHANGE

File Size:

203.65 KB

Description:

Npn transistor.

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