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2SD1376 - NPN Transistor

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Part number 2SD1376
Manufacturer INCHANGE
File Size 203.65 KB
Description NPN Transistor
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Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Low Collector-Emitter Saturation Voltage Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.

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