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2SD1376 - NPN Transistor

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Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Low Collector-Emitter Saturation Voltage Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Datasheet Details

Part number 2SD1376
Manufacturer INCHANGE
File Size 203.65 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage·Complement to Type 2SB1012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3.
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