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2SD1376 - NPN Transistor

2SD1376 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Satur.

2SD1376 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector C

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Datasheet Details

Part number
2SD1376
Manufacturer
INCHANGE
File Size
203.65 KB
Datasheet
2SD1376-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1376-like datasheet