2SD1376 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SD1376 NPN Transistor

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Satur.

2SD1376-INCHANGE.pdf

2SD1376 Datasheet Preview — Preview of 2SD1376 PDF

Datasheet Details

Part number:

2SD1376

Manufacturer:

INCHANGE

File Size:

203.65 KB

Description:

NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector C

2SD1376 Distributors

📁 Related Datasheet

2SD1376K 2SD1371 2SD1375 2SD1377 2SD1377K 2SD1378

📌 All Tags

2SD1376 NPN Transistor INCHANGE

INCHANGE 2SD1376-like datasheet