2SD1376 - NPN Transistor
*High DC Current Gain- : hFE = 2000(Min)@ IC= 1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) *Low Collector-Emitter Saturation Voltage *Complement to Type 2SB1012 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
