2SD1376 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Satur.

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Datasheet Specifications

Part number: 2SD1376
Manufacturer: INCHANGE
File Size: 203.65 KB
Datasheet: 2SD1376-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector C

2SD1376 Distributors

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2SD1376 NPN Transistor INCHANGE

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