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2SD1845 Silicon NPN Power Transistor

2SD1845 Description

isc Silicon NPN Power Transistor 2SD1845 .
Collector-Base Breakdown Voltage- : VCBO= 1300V (Min. High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations fo.

2SD1845 Applications

* Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.5 A ICM Collecto

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Datasheet Details

Part number
2SD1845
Manufacturer
INCHANGE
File Size
211.75 KB
Datasheet
2SD1845-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2SD1845-like datasheet