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2SD2000 Datasheet - INCHANGE

2SD2000 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *High Speed Switching *Good Linearity of hFE *High Collector Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power switching applicatio.

2SD2000-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2000

Manufacturer:

INCHANGE

File Size:

210.86 KB

Description:

Npn transistor.

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