2SD2000 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. High Speed Switching. Good Linearity of hFE. High Collector Power Dissipa.

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Datasheet Specifications

Part number: 2SD2000
Manufacturer: INCHANGE
File Size: 210.86 KB
Datasheet: 2SD2000-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current- Continuous Coll

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2SD2000 NPN Transistor INCHANGE

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