2SD2082 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD2082

Manufacturer:

INCHANGE

File Size:

200.24kb

Download:

📄 Datasheet

Description:

Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) *Low Collect

TAGS

2SD2082

INCHANGE

📁 Related Datasheet

2SD2081 - Silicon NPN Transistor (Sanken electric)
Darlington 2SD2081 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5.

2SD2081 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complem.

2SD2082 - Silicon NPN Transistor (Sanken electric)
Darlington 2SD2082 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8.

2SD2082 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2082 .. DESCRIPTION ·With TO-3PML package ·DARLING.

2SD2083 - Silicon NPN Transistor (Sanken electric)
Darlington 2SD2083 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=1.

2SD2083 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown V.

2SD2088 - Silicon NPN Transistor (Toshiba Semiconductor)
2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Ap.

2SD2089 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to.

2SD2089 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2089 .. DESCRIPTION ·With TO-3P(H)IS package ·Buil.

2SD200 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Col.