2SD2083 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 2000(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Complement to.

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Datasheet Specifications

Part number: 2SD2083
Manufacturer: INCHANGE
File Size: 199.07 KB
Datasheet: 2SD2083-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM

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2SD2083 NPN Transistor INCHANGE

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