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2SD2300 NPN Transistor

2SD2300 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Built-in Damper Diode. Minimum Lot-to-Lot variations for robust device performance and relia.

2SD2300 Applications

* Designed for CTV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A IC(peak) Collector Current-Peak 6 A IC(surge) Co

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Datasheet Details

Part number
2SD2300
Manufacturer
INCHANGE
File Size
194.75 KB
Datasheet
2SD2300-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2300-like datasheet