2SD2300 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Built-in Damper Diode. Minimum Lot-to-Lot variations for robust device performance and relia.

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Datasheet Specifications

Part number: 2SD2300
Manufacturer: INCHANGE
File Size: 194.75 KB
Datasheet: 2SD2300-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for CTV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A IC(peak) Collector Current-Peak 6 A IC(surge) Co

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2SD2300 NPN Transistor INCHANGE

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