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2SD2374 NPN Transistor

2SD2374 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector Power Dissipation- : PC= 25 W@ TC= 25℃. Low Collector Saturation Vol.

2SD2374 Applications

* Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Powe

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Datasheet Details

Part number
2SD2374
Manufacturer
INCHANGE
File Size
195.21 KB
Datasheet
2SD2374-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2374-like datasheet