2SD357 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. Complement to Type 2SB527. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SD357
Manufacturer: INCHANGE
File Size: 211.52 KB
Datasheet: 2SD357-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=

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2SD357 Silicon NPN Power Transistor INCHANGE

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