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2SD357 Datasheet - INCHANGE

2SD357 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Good Linearity of hFE *Complement to Type 2SB527 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATING.

2SD357-INCHANGE.pdf

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Datasheet Details

Part number:

2SD357

Manufacturer:

INCHANGE

File Size:

211.52 KB

Description:

Silicon npn power transistor.

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2SD357 2SD357 Silicon NPN Power Transistor INCHANGE

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