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2SD371 Silicon NPN Power Transistors

2SD371 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High Power Dissipation- : PC= 50W(Max)@TC=25℃. Complement to Type 2SB531.

2SD371 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous PC

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Datasheet Details

Part number
2SD371
Manufacturer
INCHANGE
File Size
209.46 KB
Datasheet
2SD371-INCHANGE.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors INCHANGE
INCHANGE 2SD371-like datasheet