2SD371 Silicon NPN Power Transistors

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High Power Dissipation- : PC= 50W(Max)@TC=25℃. Complement to Type 2SB531.

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Datasheet Specifications

Part number: 2SD371
Manufacturer: INCHANGE
File Size: 209.46 KB
Datasheet: 2SD371-INCHANGE.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous PC

2SD371 Distributors

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2SD371 Silicon NPN Power Transistors INCHANGE

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