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2SD665 - NPN Transistor

2SD665 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD665 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Current Capability. Excellent Safe Operating Area. Complement to Typ.

2SD665 Applications

* Designed for power amplifier applications.
* Recommended for 200W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage

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Datasheet Details

Part number
2SD665
Manufacturer
INCHANGE
File Size
196.66 KB
Datasheet
2SD665-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD665-like datasheet