2SD665 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD665 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Current Capability. Excellent Safe Operating Area. Complement to Typ.

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Datasheet Specifications

Part number: 2SD665
Manufacturer: INCHANGE
File Size: 196.66 KB
Datasheet: 2SD665-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications.
* Recommended for 200W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage

2SD665 Distributors

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2SD665 NPN Transistor INCHANGE

INCHANGE 2SD665-like datasheet