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2SD669 - NPN Transistor

2SD669 Description

isc Silicon NPN Power Transistor .
High Collector Current-IC= 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Low Saturati.

2SD669 Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Powe

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Datasheet Details

Part number
2SD669
Manufacturer
INCHANGE
File Size
205.44 KB
Datasheet
2SD669-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD669-like datasheet