2SD669 Datasheet, transistor equivalent, INCHANGE

PDF File Details

Part number:

2SD669

Manufacturer:

INCHANGE

File Size:

205.44kb

Download:

📄 Datasheet

Description:

Npn transistor.

High Collector Current-IC= 1.5A

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)

Good Linea

2SD669 Application

• Applications
• Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

TAGS

2SD669

INCHANGE

📁 Related Datasheet

2SD661 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.

2SD661 - Silicon PNP Transistor (Panasonic Semiconductor)
Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.

2SD661A - Silicon PNP Transistor (Panasonic Semiconductor)
Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: .

2SD661A - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: .

2SD662 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2..

2SD662 - Silicon NPN Transistor (Panasonic Semiconductor)
..net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplificati.

2SD662B - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2..

2SD662B - Silicon NPN Transistor (Panasonic Semiconductor)
..net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplificati.

2SD663 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD663 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·.

2SD664 - NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3.