2SD669A NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector Current-IC= 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Low Saturati.

📥 Download Datasheet

2SD669A Datasheet Preview — Preview of 2SD669A PDF

Datasheet Specifications

Part number: 2SD669A
Manufacturer: INCHANGE
File Size: 212.41 KB
Datasheet: 2SD669A-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Powe

2SD669A Distributors

📁 Related Datasheet

2SD669AD 2SD669AT 2SD669AXD 2SD669 2SD669TA 2SD669XD

📌 All Tags

2SD669A NPN Transistor INCHANGE

INCHANGE 2SD669A-like datasheet