Datasheet4U Logo Datasheet4U.com

2SD669A NPN Transistor

2SD669A Description

isc Silicon NPN Power Transistor .
High Collector Current-IC= 1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Low Saturati.

2SD669A Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Powe

📥 Download Datasheet

Preview of 2SD669A PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD669A
Manufacturer
INCHANGE
File Size
212.41 KB
Datasheet
2SD669A-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD669AD - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD669AT - NPN Transistor (SeCoS)
  • 2SD669AXD - SMD Power Transistor (TAITRON)
  • 2SD669 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD669TA - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD669XD - SMD Power Transistor (TAITRON)
  • 2SD661 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD661A - Silicon PNP Transistor (Panasonic Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD669A-like datasheet