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2SD884 NPN Transistor

2SD884 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Hi.

2SD884 Applications

* Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Colle

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Datasheet Details

Part number
2SD884
Manufacturer
INCHANGE
File Size
204.33 KB
Datasheet
2SD884-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD884-like datasheet