2SD884 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Hi.

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Datasheet Specifications

Part number: 2SD884
Manufacturer: INCHANGE
File Size: 204.33 KB
Datasheet: 2SD884-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Colle

2SD884 Distributors

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2SD884 NPN Transistor INCHANGE

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