2SD970 Datasheet - INCHANGE

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2SD970 NPN Transistor

isc Silicon NPN Darlington Power Transistor 2SD970 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 4A. Low Saturation Voltage. Co.

2SD970-INCHANGE.pdf

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Datasheet Details

Part number:

2SD970

Manufacturer:

INCHANGE

File Size:

206.55 KB

Description:

NPN Transistor

Applications

* Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector C

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2SD970 NPN Transistor INCHANGE

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