2SD970 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD970 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 4A. Low Saturation Voltage. Co.

📥 Download Datasheet

2SD970 Datasheet Preview — Preview of 2SD970 PDF

Datasheet Specifications

Part number: 2SD970
Manufacturer: INCHANGE
File Size: 206.55 KB
Datasheet: 2SD970-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector C

2SD970 Distributors

📁 Related Datasheet

2SD970K 2SD973 2SD973A 2SD974 2SD975 2SD90

📌 All Tags

2SD970 NPN Transistor INCHANGE

INCHANGE 2SD970-like datasheet