2SD970 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 4A *Low Saturation Voltage *Complement to Type 2SB791 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for medium
