Datasheet4U Logo Datasheet4U.com

2SD970 NPN Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Darlington Power Transistor 2SD970 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 4A. Low Saturation Voltage. Co.

📥 Download Datasheet

Preview of 2SD970 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD970
Manufacturer
INCHANGE
File Size
206.55 KB
Datasheet
2SD970-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector C

2SD970 Distributors

📁 Related Datasheet

  • 2SD970K - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD973 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD973A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD974 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD975 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD90 - NPN Transistor (ETC)

📌 All Tags

INCHANGE 2SD970-like datasheet