q q
1.5
1.0±0.1
Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the
2SD970, INCHANGE
isc Silicon NPN Darlington Power Transistor
2SD970
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: h.
2SD970, Hitachi Semiconductor
2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching plementary pair with 2SB791(K)
Outline
TO-220AB
2
1 1. Base .
2SD970K, Hitachi Semiconductor
2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching plementary pair with 2SB791(K)
Outline
TO-220AB
2
1 1. Base .