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2SD971 Datasheet - INCHANGE

2SD971 NPN Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min) *High DC Current Gain *High Switching Speed *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for applications such as elec.

2SD971-INCHANGE.pdf

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Datasheet Details

Part number:

2SD971

Manufacturer:

INCHANGE

File Size:

198.38 KB

Description:

Npn transistor.

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