2SD971 Datasheet - INCHANGE

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2SD971 NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD971 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min). High DC Current Gain. High Switching Speed. Wide Area of Safe Opera.

2SD971-INCHANGE.pdf

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Datasheet Details

Part number:

2SD971

Manufacturer:

INCHANGE

File Size:

198.38 KB

Description:

NPN Transistor

Applications

* Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector

2SD971 Distributors

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2SD971 NPN Transistor INCHANGE

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