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2SK1167 - N-Channel MOSFET

2SK1167 Description

isc N-Channel MOSFET Transistor 2SK1167 *.

2SK1167 Features

* With TO-3PN packaging
* Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX)
* Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

2SK1167 Applications

* Switching applications
* DC-DC converters
* Uninterruptible power supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 60

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Datasheet Details

Part number
2SK1167
Manufacturer
INCHANGE
File Size
277.15 KB
Datasheet
2SK1167-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE 2SK1167-like datasheet