Part number:
2SK2326
Manufacturer:
INCHANGE
File Size:
267.55 KB
Description:
N-channel mosfet.
* Drain-source on-resistance: RDS(on) ≤ 1.5Ω@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P
2SK2326
INCHANGE
267.55 KB
N-channel mosfet.
📁 Related Datasheet
2SK2320 - N-Channel MOSFET
(Toshiba)
..
..
..
..
..
..
.
2SK2324 - Silicon N-Channel Power F-MOS
(Panasonic)
Power F-MOS FETs
2SK758
2SK2324(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2
energy c.
2SK2328 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2328
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
2SK2328 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK2329 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK2329L - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK2329S - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK2311 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
2SK2311
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2311
Chopper Regulator, DC−DC Converter and Switching Regulator App.