Datasheet4U Logo Datasheet4U.com

2SK2654

N-Channel MOSFET

2SK2654 Features

* Drain Source Voltage- : VDSS= 900V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use in switch mode power supplies and general purpo

2SK2654 General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plus.

2SK2654 Datasheet (252.50 KB)

Preview of 2SK2654 PDF

Datasheet Details

Part number:

2SK2654

Manufacturer:

INCHANGE

File Size:

252.50 KB

Description:

N-channel mosfet.

📁 Related Datasheet

2SK2651-01MR - N-channel MOS-FET (Fuji Electric)
2SK2651-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.

2SK2652 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2652 ·FEATURES ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance.

2SK2652-01 - N-channel MOS-FET (Fuji Electric)
2SK2652-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2653-01R - N-channel MOS-FET (Fuji Electric)
2SK2653-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

2SK2654-01 - N-channel MOS-FET (Fuji Electric)
2SK2654-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2655-01R - N-channel MOS-FET (Fuji Electric)
2SK2655-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

2SK260 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalan.

2SK2601 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low d.

TAGS

2SK2654 N-Channel MOSFET INCHANGE

Image Gallery

2SK2654 Datasheet Preview Page 2

2SK2654 Distributor