2SK3580-01MR Datasheet, Mosfet, INCHANGE

2SK3580-01MR Features

• Mosfet
• With TO-220F packaging
• High speed switching
• Low gate input resistance
• Standard level gate drive
• Easy to use
• 100% avalanche tested <

PDF File Details

Part number:

2SK3580-01MR

Manufacturer:

INCHANGE

File Size:

251.27kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

2SK3580-01MR Application

• Applications
• Power supply
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain

TAGS

2SK3580-01MR

INCHANGE

📁 Related Datasheet

2SK3580-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3580-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Super FAP-G Series Features High speed switching Low on-resist.

2SK358 - N-Channel Transistor (Toshiba)
: 2SK358 ) SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIO.

2SK358 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK358 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Vol.

2SK3581-01L - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features Hig.

2SK3581-01S - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features Hig.

2SK3581-01SJ - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features Hig.

2SK3581L - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3581L FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-R.

2SK3581S - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3581S FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-R.

2SK3582TK - N-Channel MOSFET (Toshiba Semiconductor)
2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM • Application for Ultra-pact ECM 0.22±0.05 1.2±0.05 0..

2SK3582TV - N-Channel MOSFET (Toshiba Semiconductor)
2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM • Application for Ultra-pact ECM 0.2±0.05 1.2±0.05 0.3.