BD177 Datasheet - INCHANGE

BD177, NPN Transistor

isc Silicon NPN Power Transistor BD177 DESCRIPTION *DC Current Gain- : hFE= 40-250(Min)@ IC= 0.15A *Collector-Emitter Sustaining Voltage - :

Applications

* Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector C

BD177-INCHANGE.pdf