Datasheet4U Logo Datasheet4U.com

BD214 PNP Transistor

BD214 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD214 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot va.

BD214 Applications

* Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current-Continuous

📥 Download Datasheet

Preview of BD214 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD214
Manufacturer
INCHANGE
File Size
174.50 KB
Datasheet
BD214-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • BD2100U510-1351 - Ultra Low Profile 1351 Balun (Yantel)
  • BD2100U520-1350 - Ultra Low Profile 1350 Balun (Yantel)
  • BD201 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BD202 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BD203 - SILICON POWER TRANSISTOR (SavantIC)
  • BD204 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BD2040J50100AHF - PRELIMINARY Ultra Low Profile 0805 Balun (Anaren)
  • BD204115 - Single Phase Moulded Bridges (Facon)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE BD214-like datasheet