Datasheet4U Logo Datasheet4U.com

BD317 NPN Transistor

BD317 Description

isc Silicon NPN Power Transistor BD317 .
Excellent Safe Operating Area. DC Current Gain-hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

BD317 Applications

* Designed for high quality amplifiers operating up to 100 watts into 8 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1

📥 Download Datasheet

Preview of BD317 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD317
Manufacturer
INCHANGE
File Size
201.75 KB
Datasheet
BD317-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BD3150N50100AHF - Ultra Low Profile 0404 Balun (Anaren)
  • BD318 - SILICON POWER TRANSISTOR (SavantIC)
  • BD3004HFP - Voltage Regulator (Rohm)
  • BD3005HFP - Voltage Regulator (Rohm)
  • BD301N - 30 AMP BLOCK DIODES (ShunYe)
  • BD301P - 30 AMP BLOCK DIODES (ShunYe)
  • BD302 - Silicon PNP Power Transistor (Inchange Semiconductor Company Limited)
  • BD3020HFP - 500mA Output LDO Regulators (ROHM)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BD317-like datasheet