BD317 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD317 .
Excellent Safe Operating Area. DC Current Gain-hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: BD317
Manufacturer: INCHANGE
File Size: 201.75 KB
Datasheet: BD317-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high quality amplifiers operating up to 100 watts into 8 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1

BD317 Distributors

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BD317 NPN Transistor INCHANGE

INCHANGE BD317-like datasheet