BD314 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor BD314 .
Excellent Safe Operating Area. DC Current Gain-hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

📥 Download Datasheet

BD314 Datasheet Preview — Preview of BD314 PDF

Datasheet Specifications

Part number: BD314
Manufacturer: INCHANGE
File Size: 207.70 KB
Datasheet: BD314-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -

BD314 Distributors

📁 Related Datasheet

BD3150N50100AHF BD317 BD318 BD3004HFP BD3005HFP BD301N

📌 All Tags

BD314 Silicon PNP Power Transistor INCHANGE

INCHANGE BD314-like datasheet