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BD314 - Silicon PNP Power Transistor

BD314 Description

isc Silicon PNP Power Transistor BD314 .
Excellent Safe Operating Area. DC Current Gain-hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

BD314 Applications

* Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -

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Datasheet Details

Part number
BD314
Manufacturer
INCHANGE
File Size
207.70 KB
Datasheet
BD314-INCHANGE.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE
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