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BD313 - NPN Transistor

BD313 Description

isc Silicon NPN Power Transistor BD313 .
Excellent Safe Operating Area. DC Current Gain-hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

BD313 Applications

* Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10

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Datasheet Details

Part number
BD313
Manufacturer
INCHANGE
File Size
201.66 KB
Datasheet
BD313-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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