BD313
INCHANGE
201.66kb
Npn transistor. Excellent Safe Operating Area DC Current Gain-hFE= 25(Min.)@IC = 4A Collector-Emitter Saturation Voltage-
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BD311 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD311
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturati.
BD311 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD311
..
DESCRIPTION ·With TO-3 package ·High DC curr.
BD312 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BD312
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -5A ·Collector-Emitter Saturat.
BD312 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD312
..
DESCRIPTION ·With TO-3 package ·High DC curr.
BD314 - Silicon PNP Power Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BD314
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -4A ·Collector-Emitter Saturat.
BD315 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD315
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturati.
BD3150N50100AHF - Ultra Low Profile 0404 Balun
(Anaren)
Model BD3150N50100AHF
Rev D
PRELIMINARY
Ultra Low Profile 0404 Balun 50Ω to 100Ω Balanced
Description
The BD3150N50100AHF is a low cost, low profile s.
BD316 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BD316
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -8A ·Collector-Emitter Saturat.
BD317 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD317
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturati.
BD317 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD317
..
DESCRIPTION ·With TO-3 package ·High DC curr.
