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BD315 - NPN Transistor

Datasheet Summary

Description

Excellent Safe Operating Area DC Current Gain-hFE= 25(Min.)@IC = 8A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A Complement to Type BD316 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

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Datasheet Details

Part number BD315
Manufacturer INCHANGE
File Size 201.58 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor BD315 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A ·Complement to Type BD316 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 4 ohm load.
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