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BD315 - NPN Transistor

BD315 Description

isc Silicon NPN Power Transistor BD315 .
Excellent Safe Operating Area. DC Current Gain-hFE= 25(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

BD315 Applications

* Designed for high quality amplifiers operating up to 100 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16

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Datasheet Details

Part number
BD315
Manufacturer
INCHANGE
File Size
201.58 KB
Datasheet
BD315-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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