BD318 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BD318

Manufacturer:

INCHANGE

File Size:

203.70kb

Download:

📄 Datasheet

Description:

Pnp transistor.

Excellent Safe Operating Area

DC Current Gain-hFE= 25(Min.)@IC = -5A

Collector-Emitter Saturation Voltage-

BD318 Application

• Applications
• Designed for high quality amplifiers operating up to 100 watts into 8 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

TAGS

BD318

INCHANGE

📁 Related Datasheet

BD311 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD311 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturati.

BD311 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD311 .. DESCRIPTION ·With TO-3 package ·High DC curr.

BD312 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD312 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -5A ·Collector-Emitter Saturat.

BD312 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312 .. DESCRIPTION ·With TO-3 package ·High DC curr.

BD313 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD313 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 4A ·Collector-Emitter Saturati.

BD314 - Silicon PNP Power Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD314 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -4A ·Collector-Emitter Saturat.

BD315 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD315 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturati.

BD3150N50100AHF - Ultra Low Profile 0404 Balun (Anaren)
Model BD3150N50100AHF Rev D PRELIMINARY Ultra Low Profile 0404 Balun 50Ω to 100Ω Balanced Description The BD3150N50100AHF is a low cost, low profile s.

BD316 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor BD316 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -8A ·Collector-Emitter Saturat.

BD317 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BD317 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturati.