BD354 PNP Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD354 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Excellen.

📥 Download Datasheet

BD354 Datasheet Preview — Preview of BD354 PDF

Datasheet Specifications

Part number: BD354
Manufacturer: INCHANGE
File Size: 194.77 KB
Datasheet: BD354-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collec

BD354 Distributors

📁 Related Datasheet

BD3540NUV BD3541NUV BD3500 BD3500FVM BD3501 BD3501FVM

📌 All Tags

BD354 PNP Transistor INCHANGE

INCHANGE BD354-like datasheet