BD355 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -2.0A *Excellent Safe Operating Area *Complement to Type BD354 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *
